Penta-MX2 (M = Ni, Pd and Pt; X = P and As) monolayers: direct band-gap semiconductors with high carrier mobility-Reference-Cited by-同舟云学术

Penta-MX2 (M = Ni, Pd and Pt; X = P and As) monolayers: direct band-gap semiconductors with high carrier mobility

Published:2019 Issue:12 Volume:7 Page:3569-3575
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Qian Shifeng¹²³⁴⁵,Sheng Xiaowei¹²³⁴⁵^ORCID,Xu Xian¹²³⁴⁵,Wu Yuxiang¹²³⁴⁵,Lu Ning¹²³⁴⁵,Qin Zhengbo¹²³⁴⁵,Wang Jian⁶⁷⁸⁵,Zhang Caixia⁹¹⁰¹¹¹²,Feng Eryin¹²³⁴⁵,Huang Wuying¹²³⁴⁵,Zhou Yong¹²³⁴⁵

Affiliation:

1. Department of Physics

2. Anhui Province Key Laboratory of Optoelectric Materials Science and Technology

3. Anhui Normal University

4. Wuhu 241000

5. China

6. School of Science

7. Huzhou University

8. Zhejiang 10083

9. College of Physics and Information Engineering

10. Fuzhou University

11. Fuzhou

12. P. R. China

Abstract

Two-dimensional binary MX₂ (M = Ni, Pd and Pt; X = P and As) exhibiting a beautiful pentagonal ring network is discussed through first principles calculations.

Funder

Natural Science Foundation of Fujian Province

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C8TC06030D

Reference63 articles.

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