Analysis of improving the edge quality and growth rate of single-crystal diamond growth using a substrate holder-Reference-Cited by-同舟云学术

Analysis of improving the edge quality and growth rate of single-crystal diamond growth using a substrate holder

Published:2019 Issue:43 Volume:21 Page:6574-6584
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Yang Bo¹²³⁴^ORCID,Shen Qiao⁵⁶⁴,Gan Zhiyin¹²³⁴⁵,Liu Sheng¹²³⁴⁷

Affiliation:

1. School of Mechanical Science and Engineering

2. Huazhong University of Science and Technology

3. Wuhan 430074

4. China

5. TrueOne Semiconductor Technology Company Ltd.

6. Guangdong 528251

7. School of Power and Mechanical Engineering

Abstract

To improve the edge regions. Growth using the old substrate holder, the edge quality was improved, but the average growth rate decreased. So, a newly substrate holder was designed. The edge quality and the growth rate were both improved.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/CE/C9CE01402K

Reference32 articles.

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2. Electrical properties of the high quality boron-doped synthetic single-crystal diamonds grown by the temperature gradient method

3. A. Mainwood , in CVD Diamond for Electronic Sensors and Devices , ed. R. S. Sussmann , Wiley , Chichester, U.K. , 2009 , ch. 4

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