300 mm Wafer-level, ultra-dense arrays of Au-capped nanopillars with sub-10 nm gaps as reliable SERS substrates
Author:
Affiliation:
1. IMEC
2. B-3001 Leuven, Belgium
3. INPAC and Department of Physics and Astronomy
4. Panasonic Corporation
5. Kyoto 619-0237, Japan
Abstract
The 193 nm deep UV immersion lithography is leveraged to fabricate highly dense and uniform arrays of Au-capped Si nanopillars on a 300 mm wafer level for reliable surface enhanced Raman spectroscopy applications.
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2014/NR/C4NR04315D
Reference35 articles.
1. Dispersion Characteristics in Disk-on-Pillar Array Nanostructures for Surface-Enhanced Raman Spectroscopy
2. Optimum Length of Silver Nanorods for Fabrication of Hot Spots
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4. Improved SERS Performance from Au Nanopillar Arrays by Abridging the Pillar Tip Spacing by Ag Sputtering
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