Electronic and magnetic properties of n-type and p-doped MoS2 monolayers-Reference-Cited by-同舟云学术

Electronic and magnetic properties of n-type and p-doped MoS2 monolayers

Published:2016 Issue:20 Volume:6 Page:16772-16778
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Zhao Xu¹²³⁴,Chen Peng¹²³⁴,Xia Congxin¹²³⁴,Wang Tianxing¹²³⁴,Dai Xianqi¹²³⁴⁵

Affiliation:

1. College of Physics and Electronic Engineering

2. Henan Normal University

3. Xinxiang

4. China

5. Department of Physics

Abstract

The electronic and magnetic properties of n- and p-type impurities by means of group V and VII atoms substituting sulfur in a MoS₂ monolayer were investigated using first-principles methods based on density functional theory.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C5RA27540G

Reference63 articles.

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3. Single-layer MoS2 transistors

4. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

5. Photoluminescence from Chemically Exfoliated MoS2

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