Sub-kT/q switching in In2O3 nanowire negative capacitance field-effect transistors

Author:

Su Meng12345,Zou Xuming12345,Gong Youning6785ORCID,Wang Jianlu91011125,Liu Yuan12345,Ho Johnny C.1314155ORCID,Liu Xingqiang12345ORCID,Liao Lei12345

Affiliation:

1. Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education

2. School of Physics and Electronics

3. Hunan University

4. Changsha 410082

5. China

6. School of Physics and Technology

7. Wuhan University

8. Wuhan 430072

9. National Laboratory for Infrared Physics

10. Shanghai Institute of Technical Physics

11. Chinese Academy of Sciences

12. Shanghai 200083

13. Department of Materials Science and Engineering

14. City University of Hong Kong Tat Chee Avenue

15. Kowloon

Abstract

Nanowire based NC-FETs with SS values below 60 mV dec−1 are demonstrated. Short channel devices are fabricated using a self-alignment approach.

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Natural Science Foundation of Hubei Province

Natural Science Foundation of Hunan Province

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

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