Epitaxial ferroelectric Hf0.5Zr0.5O2 thin film on a buffered YSZ substrate through interface reaction-Reference-Cited by-同舟云学术

Epitaxial ferroelectric Hf0.5Zr0.5O2 thin film on a buffered YSZ substrate through interface reaction

Published:2018 Issue:34 Volume:6 Page:9224-9231
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Li Tao¹²³⁴⁵^ORCID,Zhang Nian⁶⁷⁸⁴,Sun Zhenzhong¹²³⁴,Xie Chunxiao¹²³⁴,Ye Mao⁹¹⁰¹¹⁴,Mazumdar Sayantan¹²³⁴,Shu Longlong⁵¹²¹³⁴,Wang Yu⁵¹²¹³⁴,Wang Danyang⁵¹⁴¹⁵¹⁶,Chen Lang⁵¹⁴¹⁵¹⁶,Ke Shanming⁵¹²¹³⁴⁵,Huang Haitao¹⁷¹⁸¹⁹²⁰⁴^ORCID

Affiliation:

1. School of Mechanical Engineering

2. Dongguan University of Technology

3. Dongguan 523808

4. P. R. China

5. School of Materials Science and Engineering

6. Shanghai Institute of Microsystem and Information Technology

7. Chinese Academy of Sciences

8. Shanghai 200050

9. Department of Physics

10. South University of Science and Technology of China

11. Shenzhen 518055

12. Nanchang University

13. Nanchang 330031

14. The University of New South Wales

15. Sydney

16. Australia

17. Department of Applied Physics and Materials Research Center

18. The Hong Kong Polytechnic University

19. Hung Hom

20. Kowloon

Abstract

In this study, we used pulsed laser deposition to successfully grow epitaxial Hf_0.5Zr_0.5O₂ (HZO) films on (001)-, (011)- and (111)-oriented yttria-stabilized zirconia (YSZ) substrates using TiN as the bottom electrode.

Funder

National Natural Science Foundation of China

Research Grants Council, University Grants Committee

China Postdoctoral Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C8TC02941E

Reference35 articles.

1. Toward a multifunctional monolithic device based on pyroelectricity and the electrocaloric effect of thin antiferroelectric Hf x Zr 1−x O 2 films