Tuning Schottky barriers for monolayer GaSe FETs by exploiting a weak Fermi level pinning effect
Author:
Affiliation:
1. Key Laboratory of Materials Modification by Laser
2. Ion and Electron Beams (Dalian University of Technology)
3. Ministry of Education
4. Dalian 116024
5. China
Abstract
Monolayer gallium selenide (GaSe), an emerging two-dimensional semiconductor, holds great promise for electronics and optoelectronics.
Funder
National Natural Science Foundation of China
Dalian University of Technology
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://pubs.rsc.org/en/content/articlepdf/2018/CP/C8CP03740J
Reference45 articles.
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4. Single-Layer Group-III Monochalcogenide Photocatalysts for Water Splitting
5. GaS and GaSe Ultrathin Layer Transistors
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