Band gap engineering of MnO2 through in situ Al-doping for applicable pseudocapacitors-Reference-Cited by-同舟云学术

Band gap engineering of MnO2 through in situ Al-doping for applicable pseudocapacitors

Author:

Li Tianqi¹²³⁴⁵,Wu Jiabin⁶⁷⁴⁸,Xiao Xu¹²³⁴⁵,Zhang Bingyan¹²³⁴⁵,Hu Zhimi¹²³⁴⁵,Zhou Jun¹²³⁴⁵,Yang Peihua¹²³⁴⁵,Chen Xun¹²³⁴⁵,Wang Bo¹²³⁴⁵,Huang Liang¹²³⁴⁵

Affiliation:

1. Wuhan National Laboratory for Optoelectronics

2. School of Optical and Electronic Information

3. Huazhong University of Science and Technology

4. Wuhan 430074

5. P. R. Chinacn

6. School of Materials Science and Engineering

7. Wuhan University of Technology

8. P. R. China

Abstract

Band gap engineering was achieved by in situ doping method for high electrical conductivity and chemical activity of MnO₂.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

Reference25 articles.

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