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Quantum spin hall insulators in strain-modified arsenene

Published:2015 Issue:45 Volume:7 Page:19152-19159
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Zhang Haijun,Ma Yandong,Chen Zhongfang

Funder

National Science Foundation

Army Research Office

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2015/NR/C5NR05006E

Reference56 articles.

1. Colloquium: Topological insulators

2. Topological insulators and superconductors

3. The quantum spin Hall effect and topological insulators

4. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

5. Z2Topological Order and the Quantum Spin Hall Effect

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1. Tuning electronic structures in monolayer arsenene through charged point defects and partial oxidization;Applied Surface Science;2024-10

2. Large-Gap Quantum Spin Hall Insulators in Two-Dimensional Hafnium Halides: Unraveling the Impact of Strain and Substrate;ACS Omega;2024-07-12

3. Effect of Size Change on Mechanical Properties of Monolayer Arsenene;Journal of Wuhan University of Technology-Mater. Sci. Ed.;2024-01-17

4. Strain-Induced Nontrivial Topology and a Negative Poisson’s Ratio in the Sn₂BN Monolayer;ACS Applied Electronic Materials;2024-01-04

5. Strain induced band-gap tailoring in SeO and TeO topological insulators;Physica B: Condensed Matter;2023-10

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