CVD-deposited Cu2O thin films with a record Hall hole mobility of 263 cm2 V−1 s−1 and field-effect mobility of 0.99 cm2 V−1 s−1-Reference-Cited by-同舟云学术

CVD-deposited Cu₂O thin films with a record Hall hole mobility of 263 cm² V⁻¹ s⁻¹ and field-effect mobility of 0.99 cm² V⁻¹ s⁻¹

Published:2023 Issue:22 Volume:11 Page:7356-7366
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Singh Vivek¹^ORCID,Sinha Jyoti¹,Shivashankar S. A.¹^ORCID,Avasthi Sushobhan¹

Affiliation:

1. Centre for Nano Science and Engineering (CeNSE), Indian Institute of Science, Bangalore, Bangalore-560012, India

Abstract

Using a combination of chemical vapor deposition, controlled nucleation, and surface energy optimization, we demonstrate record hole mobility in Cu2O thin-films and thin-film transistors.

Funder

Ministry of Electronics and Information technology

Department of Science and Technology, Ministry of Science and Technology, India

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D3TC00789H

Reference53 articles.

1. p-Channel Oxide Thin Film Transistors Using Solution-Processed Copper Oxide

2. Effect of structural defects, surface roughness on sensing properties of Al doped ZnO thin films deposited by chemical spray pyrolysis technique

3. Zinc Tin Oxide Thin-Film-Transistor Enhancement/Depletion Inverter

4. Exploratory Combustion Synthesis: Amorphous Indium Yttrium Oxide for Thin-Film Transistors

5. Cuprous oxide (Cu 2 O) crystal structure, lattice parameters, Non-Tetrahedrally Bonded Elements and Binary Compounds I , ed. O. Madelung, U. Rössler and M. Schulz, Landolt-Börnstein - Group III Condensed Matter, Springer-Verlag, Berlin/Heidelberg, 1998, vol. 41C, pp. 1–3 10.1007/10681727_56

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