Polytypism in few-layer gallium selenide-Reference-Cited by-同舟云学术

Polytypism in few-layer gallium selenide

Published:2020 Issue:15 Volume:12 Page:8563-8573
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Lim Soo Yeon¹²³⁴^ORCID,Lee Jae-Ung¹²³⁴¹^ORCID,Kim Jung Hwa⁵⁶⁷⁴⁸,Liang Liangbo⁹¹⁰¹¹¹²^ORCID,Kong Xiangru⁹¹⁰¹¹¹²,Nguyen Thi Thanh Huong¹³¹⁴¹⁵⁴,Lee Zonghoon⁵⁶⁷⁴⁸,Cho Sunglae¹³¹⁴¹⁵⁴,Cheong Hyeonsik¹²³⁴^ORCID

Affiliation:

1. Department of Physics

2. Sogang University

3. Seoul 04107

4. Korea

5. School of Materials Science and Engineering

6. Ulsan National Institute of Science and Technology (UNIST)

7. Ulsan 44919

8. Center for Multidimensional Carbon Materials

9. Center for Nanophase Materials Sciences

10. Oak Ridge National Laboratory

11. Oak Ridge

12. USA

13. Department of Physics and Energy Harvest Storage Research Center

14. University of Ulsan

15. Ulsan 44610

Abstract

Different stacking sequences due to polytypism in 2-dimensional few-layer GaSe were identified by Raman spectroscopy, HR-S/TEM, and theoretical calculations.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NR/D0NR00165A

Reference71 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Atomically ThinMoS2: A New Direct-Gap Semiconductor

3. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides