Extremely low trap-state energy level perovskite solar cells passivated using NH2-POSS with improved efficiency and stability

Author:

Liu Na12345,Du Qin12345,Yin Guangzhong678910ORCID,Liu Pengfei12345,Li Liang1112131410,Xie Haipeng151617185,Zhu Cheng12345,Li Yujing12345,Zhou Huanping1112131410ORCID,Zhang Wen-Bin678910ORCID,Chen Qi12345ORCID

Affiliation:

1. Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems

2. School of Materials Science & Engineering

3. Beijing Institute of Technology

4. Beijing

5. P. R. China

6. Beijing Key National Laboratory for Molecular Science (BNLMS)

7. Laboratory of Polymer Chemistry & Physics of Ministry of Education

8. Center for Soft Matter Science and Engineering

9. College of Chemistry and Molecular Engineering

10. Peking University

11. Beijing Key Laboratory for Theory and Technology of Advanced Battery Materials

12. Department of Materials Science and Engineering

13. Department of Energy and Resources Engineering

14. College of Engineering

15. Hunan Key Laboratory for Super-microstructure and Ultrafast Process

16. School of Physics and Electronics

17. Central South University

18. Changsha 410083

Abstract

The defects at perovskite film surface could be passivated effectively using a derivative of polyhedral oligomeric silsesquioxane with an amino-group (NH2-POSS). The extremely low trap-state energy level (0.045 eV) was obtained by temperature-dependent admittance measurements. Both stability and efficiency in devices have been approved.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

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