Multilayered silicene: the bottom-up approach for a weakly relaxed Si(111) with Dirac surface states-Reference-Cited by-同舟云学术

Multilayered silicene: the bottom-up approach for a weakly relaxed Si(111) with Dirac surface states

Published:2015 Issue:38 Volume:7 Page:15880-15885
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Fu Huixia¹²³,Chen Lan¹²³,Chen Jian¹²³,Qiu Jinglan¹²³,Ding Zijing¹²³,Zhang Jin¹²³,Wu Kehui¹²³,Li Hui¹²³,Meng Sheng¹²³

Affiliation:

1. Beijing National Laboratory for Condensed Matter Physics and Institute of Physics

2. Chinese Academy of Sciences

3. Beijing 100190, China

Abstract

Combining first principles investigations and scanning tunneling microscopy, we identify that the presumable van der Waals packed multilayered silicene sheets spontaneously transform into a diamond-structure bulk Si film due to strong interlayer couplings.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2015/NR/C5NR04548G

Reference49 articles.

1. Electronic structure of silicon-based nanostructures

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4. Valley-Polarized Metals and Quantum Anomalous Hall Effect in Silicene

5. Evidence for Dirac Fermions in a Honeycomb Lattice Based on Silicon

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