Modulating the electro-optical properties of doped C3N monolayers and graphene bilayers via mechanical strain and pressure-Reference-Cited by-同舟云学术

Modulating the electro-optical properties of doped C3N monolayers and graphene bilayers via mechanical strain and pressure

Published:2020 Issue:36 Volume:44 Page:15785-15792
ISSN:1144-0546
Container-title:New Journal of Chemistry
language:en
Short-container-title:New J. Chem.

Author:

Bafekry A.¹²³⁴¹,Nguyen C.⁵⁶⁷⁸^ORCID,Obeid M. M.⁹¹⁰¹¹¹²^ORCID,Ghergherehchi M.¹³¹⁴¹⁵¹⁶

Affiliation:

1. Department of Physics

2. University of Guilan

3. 41335-1914 Rasht

4. Iran

5. Institute of Research and Development

6. Duy Tan University

7. Da Nang 550000

8. Vietnam

9. Department of Ceramics

10. College of Materials Engineering

11. University of Babylon

12. Iraq

13. College of Electronic and Electrical Engineering

14. Sungkyun Kwan University

15. Suwon

16. Korea

Abstract

The effect of atomic doping on the electronic properties of C₃N monolayer and graphene bilayer is investigated. We found that doped C₃N monolayer and doped graphene bilayer are a direct semiconductor. Our result show that the electronic properties of the studied structures can be modulated by electric field and mechanical strain.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry,Catalysis

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NJ/D0NJ03340E

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