Polarization engineered InGaN/GaN visible-light photodiodes featuring high responsivity, bandpass response, and high speed-Reference-Cited by-同舟云学术

Polarization engineered InGaN/GaN visible-light photodiodes featuring high responsivity, bandpass response, and high speed

Published:2021 Issue:36 Volume:9 Page:12273-12280
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Lv Zesheng¹^ORCID,Guo Yao¹,Zhang Supeng¹,Wen Quan¹,Jiang Hao¹²³

Affiliation:

1. School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, Guangdong, China

2. State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, Guangdong, China

3. Guangdong Engineering Technology R & D Center of Compound Semiconductors and Devices, Sun Yat-sen University, Guangzhou, Guangdong, China

Abstract

InGaN/GaN visible-light p–i–n photodiodes with a p-down structure were fabricated using a polarization-doped p-type layer realized by depositing a linearly graded AlGaN. The photodiodes exhibited high responsivity, high speed and bandpass response.

Funder

Natural Science Foundation of Guangdong Province

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D1TC01193F

Reference37 articles.

1. A guide to wireless networking by light

2. Color-selective photodetection from intermediate colloidal quantum dots buried in amorphous-oxide semiconductors