Influence of sapphire substrate with miscut angles on hexagonal boron nitride films grown by halide vapor phase epitaxy-Reference-Cited by-同舟云学术

Influence of sapphire substrate with miscut angles on hexagonal boron nitride films grown by halide vapor phase epitaxy

Published:2023 Issue:32 Volume:25 Page:4604-4610
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Chen Minghao¹,Zhang Qian¹,Fang Chunlei¹,Shen Zhijie¹,Lu Yong¹,Liu Ting¹,Tan Shuxin²,Zhang Jicai¹³^ORCID

Affiliation:

1. College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, China

2. School of Electronics and Information, Nantong University, Nantong 226019, China

3. State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029, China

Abstract

(002) hexagonal boron nitride (h-BN) micron films were epitaxially grown on c-plane sapphire substrates with miscut angles to m-plane (m-miscut angle) by high-temperature and low-pressure halide vapor phase epitaxy.

Funder

Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China

Major Scientific and Technological Innovation Project of Shandong Province

Special Project for Research and Development in Key areas of Guangdong Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CE/D3CE00528C

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