Doping-free bandgap tunability in Fe2O3 nanostructured films-Reference-Cited by-同舟云学术

Doping-free bandgap tunability in Fe2O3 nanostructured films

Published:2021 Issue:19 Volume:3 Page:5581-5588
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Kadam Sujit A.¹,Phan Giang Thi¹^ORCID,Pham Duy Van¹²^ORCID,Patil Ranjit A.¹^ORCID,Lai Chien-Chih¹,Chen Yan-Ruei³^ORCID,Liou Yung³,Ma Yuan-Ron¹^ORCID

Affiliation:

1. Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan

2. Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan

3. Institute of Physics, Academia Sinica, Taipei 11529, Taiwan

Abstract

Fe2O3 nanostructured films are grown on ITO/glass substrates using the HFMOVD and thermal oxidation techniques. The increase of the Fe2+ cations and cubic (γ) phase leads to a reduction in the bandgap of the Fe2O3 nanostructured films.

Funder

Ministry of Science and Technology, Taiwan

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NA/D1NA00442E

Reference58 articles.

1. Low‐Bandgap Porphyrins for Highly Efficient Organic Solar Cells: Materials, Morphology, and Applications

2. Band Gap Tuning via Lattice Contraction and Octahedral Tilting in Perovskite Materials for Photovoltaics

3. Monolithic Perovskite-CIGS Tandem Solar Cells via In Situ Band Gap Engineering

4. Thermally Strained Band Gap Engineering of Transition-Metal Dichalcogenide Bilayers with Enhanced Light–Matter Interaction toward Excellent Photodetectors

5. Bandgap tunable Zn1−xMgxO thin films as electron transport layers for high performance quantum dot light-emitting diodes

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