Origin of arbitrary patterns by direct laser writing in a telluride thin film-Reference-Cited by-同舟云学术

Origin of arbitrary patterns by direct laser writing in a telluride thin film

Published:2016 Issue:51 Volume:6 Page:45748-45752
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Wei Tao¹²³⁴⁵,Wei Jingsong⁶²³⁴⁵,Zhang Kui⁶²³⁴⁵,Zhou Qijun⁶²³⁴⁵,Bai Zhen⁶²³⁴⁵,Liang Xin⁶²³⁴⁵,Li Qisong¹²³⁴⁵,Ding Chenliang⁶²³⁴⁵,Wang Yang⁶²³⁴⁵,Zhang Long¹²³⁴⁵

Affiliation:

1. Key Laboratory of Materials for High Power Laser

2. Shanghai Institute of Optics and Fine Mechanics

3. Chinese Academy of Sciences

4. Shanghai 201800

5. PR China

6. Laboratory for High Density Optical Storage

Abstract

A crystalline telluride (Te) thin film was prepared by a radio frequency magnetron controlling sputtering method.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C5RA23627D

Reference39 articles.

1. Laser direct writing of nanoreliefs in Sn nanofilms

2. Three-dimensional microfabrication of materials by femtosecond lasers for photonics applications

3. Electromagnetic chirality induced by graphene inclusions in multilayered metamaterials

4. Arbitrary focusing lens by holographic metasurface

5. Optically reconfigurable metasurfaces and photonic devices based on phase change materials

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