Unveiling of interstice-occupying dopant segregation at grain boundaries in perovskite oxide dielectrics for a new class of ceramic capacitors-Reference-Cited by-同舟云学术

Unveiling of interstice-occupying dopant segregation at grain boundaries in perovskite oxide dielectrics for a new class of ceramic capacitors

Published:2023 Issue:5 Volume:16 Page:1992-2002
ISSN:1754-5692
Container-title:Energy & Environmental Science
language:en
Short-container-title:Energy Environ. Sci.

Author:

An Ji-Sang¹,Lee Hae-Seung¹,Byeon Pilgyu¹,Kim Dongho¹^ORCID,Bae Hyung Bin²,Choi Si-Young³^ORCID,Ryu Jungho⁴^ORCID,Chung Sung-Yoon¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, Korea

2. KAIST Analysis Center, Korea Advanced Institute of Science and Technology, Daejeon 34141, Korea

3. Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 37673, Korea

4. School of Materials Science and Engineering, Yeungnam University, Gyeongsan, Gyeongbuk 38541, Korea

Abstract

We elucidate that the peculiar segregation behavior of indium have a critical contribution to achieving unprecedented dielectric properties for a new class of high-reliability ceramic capacitors.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

Pollution,Nuclear Energy and Engineering,Renewable Energy, Sustainability and the Environment,Environmental Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/EE/D2EE03152C

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