Improving the performance of lead-free Cs2AgBiBr6 double perovskite solar cells by passivating Br vacancies

Author:

Chen Junjie1ORCID,Ma Xingyu1,Gong Li123ORCID,Zhou Conghua4ORCID,Chen Jianlin5,Lu Yangfan3,Zhou Maojun1,He Haiping23ORCID,Ye Zhizhen236

Affiliation:

1. School of Materials Science and Engineering, Changsha University of Science and Technology, Changsha 410114, China

2. Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China

3. School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China

4. Hunan Key Laboratory of Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China

5. School of Energy & Power Engineering, Changsha University of Science and Technology, Changsha 410114, China

6. Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan 030001, China

Abstract

Targeted passivation of the easily formed deep level defect VBr by introducing 4% HBr results in an enhancement of PCE. This work enriches the study on the passivation of intrinsic point defects in Cs2AgBiBr6.

Funder

Zhejiang University

Education Department of Hunan Province

Publisher

Royal Society of Chemistry (RSC)

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