An effective method for elimination of the defects in diamond caused by physical field asymmetry in high-pressure synthesis cavities
Author:
Affiliation:
1. State Key Laboratory of Superhard Materials
2. College of Physics
3. Jilin University
4. Changchun 130012
5. China
6. School of Physics and Microelectronics
7. Zhengzhou University
8. Zhengzhou 450052
Abstract
FEM was used to explain the mechanism of diamond growth defects and methods were proposed to eliminate the growth defects.
Funder
National Natural Science Foundation of China
Publisher
Royal Society of Chemistry (RSC)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2020/CE/D0CE01210F
Reference27 articles.
1. Application of Diamond in High Technology
2. Ultraviolet Emission from a Diamond pn Junction
3. Diamond crystallization with a carbonyl nickel catalyst under high pressure and temperature
4. Spiral and Other Growth Forms of Synthetic Diamonds: A Distinction Between Natural and Synthetic Diamond
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