Integration of p-type β-In2S3 thin films on III-nitride heterostructures for multiple functional applications-Reference-Cited by-同舟云学术

Integration of p-type β-In2S3 thin films on III-nitride heterostructures for multiple functional applications

Published:2016 Issue:96 Volume:6 Page:94139-94148
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Liu Hongfei¹²³⁴,Dou Qingqing¹²³⁴,Chua Chin Sheng¹²³⁴

Affiliation:

1. Institute of Materials Research and Engineering (IMRE)

2. A*STAR (Agency for Science, Technology and Research)

3. Singapore 138634

4. Singapore

Abstract

We report conversion of n-type InN thin films on III-nitride heterostructures to p-type β-In₂S₃ by postgrowth heat treatments in a sulfur-vapor environment and address their photoelectrical and photocatalytic properties for functional integrations.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C6RA22548A

Reference43 articles.

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5. Synthesis and Phase Evolutions in Layered Structure of Ga2S3 Semiconductor Thin Films on Epiready GaAs (111) Substrates

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