Comparison of diverse resistive switching characteristics and demonstration of transitions among them in Al-incorporated HfO2-based resistive switching memory for neuromorphic applications
Author:
Affiliation:
1. School of Electronics Engineering
2. Chungbuk National University
3. Cheongju 28644
4. South Korea
5. Division of Electronics and Electrical Engineering
6. Dongguk University
7. Seoul 04620
Abstract
Diverse resistive switching behaviors are observed in the Pt/HfAlOx/TiN memory device depending on the compliance current, the sweep voltage amplitude, and the bias polarity.
Funder
National Research Foundation of Korea
Dongguk University
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2020/RA/D0RA06389D
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