Comparison of diverse resistive switching characteristics and demonstration of transitions among them in Al-incorporated HfO2-based resistive switching memory for neuromorphic applications-Reference-Cited by-同舟云学术

Comparison of diverse resistive switching characteristics and demonstration of transitions among them in Al-incorporated HfO2-based resistive switching memory for neuromorphic applications

Published:2020 Issue:52 Volume:10 Page:31342-31347
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Khan Sobia Ali¹²³⁴,Kim Sungjun⁵⁶⁷⁴^ORCID

Affiliation:

1. School of Electronics Engineering

2. Chungbuk National University

3. Cheongju 28644

4. South Korea

5. Division of Electronics and Electrical Engineering

6. Dongguk University

7. Seoul 04620

Abstract

Diverse resistive switching behaviors are observed in the Pt/HfAlO_x/TiN memory device depending on the compliance current, the sweep voltage amplitude, and the bias polarity.

Funder

National Research Foundation of Korea

Dongguk University

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/RA/D0RA06389D

Reference49 articles.

1. Nanoscale molecular-switch crossbar circuits

2. Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices