Indirect bandgap, optoelectronic properties, and photoelectrochemical characteristics of high-purity Ta3N5 photoelectrodes-Reference-Cited by-同舟云学术

Indirect bandgap, optoelectronic properties, and photoelectrochemical characteristics of high-purity Ta3N5 photoelectrodes

Published:2021 Issue:36 Volume:9 Page:20653-20663
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Eichhorn Johanna¹^ORCID,Lechner Simon P.¹^ORCID,Jiang Chang-Ming¹^ORCID,Folchi Heunecke Giulia¹,Munnik Frans²,Sharp Ian D.¹^ORCID

Affiliation:

1. Walter Schottky Institute and Physics Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany

2. Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01328 Dresden, Germany

Abstract

The (opto)electronic properties of Ta3N5 photoelectrodes are often dominated by defects, but precise control of these defects provides new insight into the electronic structure, photocarrier transport, and photoelectrochemical function.

Funder

Deutsche Forschungsgemeinschaft

Solar Technologies go Hybrid

H2020 European Research Council

Bayerische Akademie der Wissenschaften

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TA/D1TA05282A

Reference52 articles.

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