Effects of annealing ambient on oxygen vacancies and phase transition temperature of VO2 thin films-Reference-Cited by-同舟云学术

Effects of annealing ambient on oxygen vacancies and phase transition temperature of VO2 thin films

Published:2016 Issue:83 Volume:6 Page:79383-79388
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Xu H. Y.¹²³⁴⁵,Huang Y. H.⁶⁷⁸⁴,Liu S.¹²³⁴,Xu K. W.¹²³⁴⁹,Ma F.¹²³⁴⁵,Chu Paul K.⁵¹⁰¹¹⁴

Affiliation:

1. State Key Laboratory for Mechanical Behavior of Materials

2. Xi'an Jiaotong University

3. Xi'an 710049

4. China

5. Department of Physics and Materials Science

6. College of Physics and Information Technology

7. Shaanxi Normal University

8. Xi'an 710062

9. Department of Physics and Opt-electronic Engineering

10. City University of Hong Kong

11. Kowloon

Abstract

VO₂ thin films are prepared on Si substrates by direct-current (DC) magnetron sputtering at room temperature and annealed in vacuum at different argon pressures.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C6RA13189A

Reference46 articles.

1. Oxides Which Show a Metal-to-Insulator Transition at the Neel Temperature

2. Evidence for a structurally-driven insulator-to-metal transition inVO2: A view from the ultrafast timescale

3. External Electric Field Manipulations on Structural Phase Transition of Vanadium Dioxide Nanoparticles and Its Application in Field Effect Transistor

4. Intrinsic Optical Properties of Vanadium Dioxide near the Insulator−Metal Transition

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