Photon upconversion in degenerately sulfur doped InP nanowires-Reference-Cited by-同舟云学术

Photon upconversion in degenerately sulfur doped InP nanowires

Published:2015 Issue:48 Volume:7 Page:20503-20509
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Mergenthaler K.¹²³,Lehmann S.¹²³,Wallentin J.⁴⁵⁶,Zhang W.⁷²³,Borgström M. T.¹²³,Yartsev A.⁷²³,Pistol M.-E.¹²³

Affiliation:

1. Department of Solid State Physics/The Nanaometer Structure Consortium

2. Lund University

3. 221 00 Lund, Sweden

4. Institute for X-ray Physics

5. University of Göttingen

6. 37077 Göttingen, Germany

7. Division of Chemical Physics

Abstract

Radiative recombination in degenerately n-doped InP nanowires is studied for excitation above and below the Fermi energy of the electron gas, using photoluminescence.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2015/NR/C5NR05472A

Reference23 articles.

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3. Electron and hole relaxation pathways in semiconductor quantum dots

4. Temperature-dependent electron-lattice thermalization in GaAs

5. Hole spin relaxation in intrinsic andp-type bulk GaAs

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