Stoichiometric Bi2Se3 topological insulator ultra-thin films obtained through a new fabrication process for optoelectronic applications-Reference-Cited by-同舟云学术

Stoichiometric Bi2Se3 topological insulator ultra-thin films obtained through a new fabrication process for optoelectronic applications

Published:2020 Issue:23 Volume:12 Page:12405-12415
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Salvato Matteo¹²³⁴⁵^ORCID,Scagliotti Mattia¹²³⁴⁵,De Crescenzi Maurizio¹²³⁴⁵^ORCID,Castrucci Paola¹²³⁴⁵^ORCID,De Matteis Fabio⁶⁷²³⁴,Crivellari Michele⁸⁹¹⁰⁴,Pelli Cresi Stefano¹¹¹²³⁴^ORCID,Catone Daniele¹¹¹²³⁴,Bauch Thilo¹³¹⁴¹⁵¹⁶¹⁷^ORCID,Lombardi Floriana¹³¹⁴¹⁵¹⁶¹⁷^ORCID

Affiliation:

1. Dipartimento di Fisica

2. Università di Roma “Tor Vergata”

3. 00133 Roma

4. Italy

5. INFN

6. Dipartimento di Ingegneria Industriale

7. INSTM and CiMER

8. Micro-Nano Characterization Facility

9. Fondazione Bruno Kessler (FBK)

10. 38123 Trento

11. CNR-ISM

12. Division of Ultrafast Processes in Materials (FLASHit) Area della Ricerca di Roma “Tor Vergata”

13. Quantum Device Physics Laboratory

14. Department of Microtechnology and Nanoscience

15. Chalmers University of Technology

16. 41296 Goteborg

17. Sweden

Abstract

Stoichiometric TI Bi₂Se₃ ultra-thin films suitable for infra-red optoelectronic applications are obtained from the by-products of nanowires/nanobelts. Tunnelling spectroscopy gives the position of the Fermi level inside the energy bandgap.

Funder

Horizon 2020 Framework Programme

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NR/D0NR02725A

Reference40 articles.

1. Model Hamiltonian for topological insulators

2. Colloquium: Topological insulators

3. The birth of topological insulators