Strain-dependent magnetic ordering switching in 2D AFM ternary V-based chalcogenide monolayers-Reference-Cited by-同舟云学术

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Strain-dependent magnetic ordering switching in 2D AFM ternary V-based chalcogenide monolayers

Published:2023 Issue:32 Volume:15 Page:13420-13427
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Pang Kaijuan¹^ORCID,Xu Xiaodong²^ORCID,Wei Yadong²^ORCID,Ying Tao¹,Gao Bo¹^ORCID,Li Weiqi¹,Jiang Yongyuan¹³⁴

Affiliation:

1. School of Physics, Harbin Institute of Technology, Harbin 150001, China

2. School of Material Science and Engineering, Harbin Institute of Technology, Harbin 150001, China

3. Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China

4. Key Lab of Micro-Optics and Photonic Technology of Heilongjiang Province, Harbin 150001, China

Abstract

The lack of macroscopic magnetic moments makes antiferromagnetic materials promising candidates for high-speed spintronic devices.

Funder

State Key Laboratory of Intense Pulsed Radiation Simulation and Effect

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D3NR02188B

Reference62 articles.

1. Nobel Lecture: Origin, development, and future of spintronics

2. The rise of semiconductor spintronics

3. Magnetic two‐dimensional layered crystals meet with ferromagnetic semiconductors

4. Spintronics: Fundamentals and applications

5. An alternating alternative

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