Competitive effects of oxygen vacancy formation and interfacial oxidation on an ultra-thin HfO2-based resistive switching memory: beyond filament and charge hopping models-Reference-Cited by-同舟云学术

Competitive effects of oxygen vacancy formation and interfacial oxidation on an ultra-thin HfO2-based resistive switching memory: beyond filament and charge hopping models

Published:2016 Issue:13 Volume:18 Page:8820-8826
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Nakamura Hisao¹²³⁴⁵,Asai Yoshihiro⁶³⁴⁵

Affiliation:

1. Research Planning Office

2. Department of Materials and Chemistry

3. National Institute of Advanced Industrial Science and Technology (AIST)

4. Tsukuba

5. Japan

6. Research Center for Computational Design of Advanced Materials

Abstract

We studied the quantum transport mechanism of an ultra-thin HfO₂-based resistive random access memory (ReRAM) cell with TiN electrodes and proposed the design of a sub-10 nm scale device.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2016/CP/C6CP00916F

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2. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

3. Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0.7Ca0.3MnO3

4. Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory

5. Evolution of RESET current and filament morphology in low-power HfO2 unipolar resistive switching memory

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