Theoretical investigation of the role of hydrogenation-induced strain in single-layer h10-Si
Author:
Affiliation:
1. School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116, China
2. Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
Abstract
Funder
Natural Science Foundation of Jiangsu Province
National Natural Science Foundation of China
Jiangsu Normal University
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://pubs.rsc.org/en/content/articlepdf/2023/CP/D2CP04855H
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1. Graphene: Status and Prospects
2. Superconductivity in the van der Waals layered compound PS2
3. Recent advances in free-standing two-dimensional crystals with atomic thickness: design, assembly and transfer strategies
4. Prediction of the two-dimensional Janus ferrovalley material LaBrI
5. Ab initio simulations of silicene hydrogenation
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