An ultrasensitive self-driven broadband photodetector based on a 2D-WS2/GaAs type-II Zener heterojunction-Reference-Cited by-同舟云学术

An ultrasensitive self-driven broadband photodetector based on a 2D-WS2/GaAs type-II Zener heterojunction

Published:2020 Issue:7 Volume:12 Page:4435-4444
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Jia Cheng¹²³⁴⁵,Huang Xiaowen⁶⁷⁸⁹⁵,Wu Di¹²³⁴⁵^ORCID,Tian Yongzhi¹²³⁴⁵,Guo Jiawen¹²³⁴⁵,Zhao Zhihui¹²³⁴⁵,Shi Zhifeng¹²³⁴⁵^ORCID,Tian Yongtao¹²³⁴⁵,Jie Jiansheng¹⁰¹¹¹²¹³^ORCID,Li Xinjian¹²³⁴⁵

Affiliation:

1. Key Laboratory of Materials Physics of Ministry of Education

2. School of Physics and Microelectronics

3. Zhengzhou University

4. Zhengzhou

5. P. R. China

6. State Key Laboratory of Biobased Material and Green Papermaking; Shandong Provincial Key Laboratory of Microbial Engineering

7. Department of Bioengineering

8. Qilu University of Technology (Shandong Academy of Sciences)

9. Jinan

10. Institute of Functional Nano & Soft Materials (FUNSOM)

11. Soochow University

12. Suzhou

13. China

Abstract

A self-driven photodetector based on WS₂/GaAs type-II Zener heterojunction is fabricated, which shows a broadband response spectrum from 200 to 1550 nm beyond the limitation of the bandgaps with a high responsivity and specific detectivity.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NR/C9NR10348A

Reference51 articles.

1. Sensing Infrared Photons at Room Temperature: From Bulk Materials to Atomic Layers

2. 2D Metal Chalcogenides for IR Photodetection

3. Nanostructured Photodetectors: From Ultraviolet to Terahertz