Mapping the nanoscale effects of charge traps on electrical transport in grain structures of indium tin oxide thin films
Author:
Affiliation:
1. Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Korea
2. Department of Physics and Astronomy, Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
Abstract
Funder
Ministry of Trade, Industry and Energy
Samsung
National Research Foundation of Korea
H2020 European Research Council
Publisher
Royal Society of Chemistry (RSC)
Subject
General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering
Link
http://pubs.rsc.org/en/content/articlepdf/2021/NA/D1NA00175B
Reference46 articles.
1. Properties of tin doped indium oxide thin films prepared by magnetron sputtering
2. Tin doped indium oxide thin films: Electrical properties
3. Electrical, optical, and structural properties of indium–tin–oxide thin films for organic light-emitting devices
4. Electron trapping center and SnO2-doping mechanism of indium tin oxide
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