Improving device performance of n-type organic field-effect transistors via doping with a p-type organic semiconductor-Reference-Cited by-同舟云学术

Improving device performance of n-type organic field-effect transistors via doping with a p-type organic semiconductor

Published:2019 Issue:15 Volume:7 Page:4543-4550
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Lan Shuqiong¹²³⁴⁵,Yan Yujie¹²³⁴⁵,Yang Huihuang¹²³⁴⁵,Zhang Guocheng¹²³⁴⁵,Ye Yun¹²³⁴⁵,Li Fushan¹²³⁴⁵^ORCID,Chen Huipeng¹²³⁴⁵^ORCID,Guo Tailiang¹²³⁴⁵

Affiliation:

1. Institute of Optoelectronic Display

2. National & Local United Engineering Lab of Flat Panel Display Technology

3. Fuzhou University

4. Fuzhou 350002

5. China

Abstract

The performance of solution-processed n-type OFETs was improved via a facile effective route, by blending a p-type organic semiconductor into the n-type polymer semiconductor.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C8TC05740K

Reference40 articles.

1. 25th Anniversary Article: Organic Field-Effect Transistors: The Path Beyond Amorphous Silicon

2. A chameleon-inspired stretchable electronic skin with interactive colour changing controlled by tactile sensing

3. A skin-inspired organic digital mechanoreceptor

4. Pursuing prosthetic electronic skin

5. Toward Printed Integrated Circuits based on Unipolar or Ambipolar Polymer Semiconductors

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