Spin-polarized Fermi surface, hole-doping and band gap in graphene with boron impurities-Reference-Cited by-同舟云学术

Spin-polarized Fermi surface, hole-doping and band gap in graphene with boron impurities

Published:2018 Issue:48 Volume:10 Page:22810-22817
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Fedorov Alexander V.¹²³⁴⁵,Yashina Lada V.⁶⁷³^ORCID,Vilkov Oleg Yu.¹²³,Laubschat Clemens⁸⁹¹⁰¹¹,Vyalikh Denis V.¹²¹³¹⁴¹⁵¹⁶,Usachov Dmitry Yu.¹²³^ORCID

Affiliation:

1. St. Petersburg State University

2. St Petersburg 199034

3. Russia

4. IFW Dresden

5. D-01171 Dresden

6. M.V. Lomonosov Moscow State University

7. 199991 Moscow

8. Institute of Solid State and Materials Physics

9. Technische Universität Dresden

10. 01062 Dresden

11. Germany

12. Donostia International Physics Center (DIPC)

13. Departamento de Fisica de Materiales and CFM-MPC UPV/EHU

14. 20080 San Sebastian

15. Spain

16. IKERBASQUE

Abstract

Embedding foreign atoms in graphene and interchanging the underlying substrate are proved to be efficient methods for manipulating the properties of graphene.

Funder

Russian Science Foundation

Deutsche Forschungsgemeinschaft

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2018/NR/C8NR08339H

Reference54 articles.

1. Is It Possible to Dope Single-Walled Carbon Nanotubes and Graphene with Sulfur?

2. Band gap opening of monolayer and bilayer graphene doped with aluminium, silicon, phosphorus, and sulfur

3. Nitrogen-Doped Graphene: Efficient Growth, Structure, and Electronic Properties

4. Doping graphene with boron: a review of synthesis methods, physicochemical characterization, and emerging applications

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