The occupied electronic structure of ultrathin boron doped diamond-Reference-Cited by-同舟云学术

The occupied electronic structure of ultrathin boron doped diamond

Published:2020 Issue:3 Volume:2 Page:1358-1364
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Pakpour-Tabrizi A. C.¹²³⁴⁵,Schenk A. K.⁶⁷⁸⁹¹⁰,Holt A. J. U.¹¹¹²¹³¹⁴¹⁵,Mahatha S. K.¹¹¹²¹³¹⁴¹⁵,Arnold F.¹¹¹²¹³¹⁴¹⁵,Bianchi M.¹¹¹²¹³¹⁴¹⁵,Jackman R. B.¹²³⁴⁵,Butler J. E.¹⁶¹⁷¹⁸,Vikharev A.¹⁹²⁰²¹²²,Miwa J. A.¹¹¹²¹³¹⁴¹⁵,Hofmann P.¹¹¹²¹³¹⁴¹⁵,Cooil S. P.⁶⁷⁸⁹¹⁰,Wells J. W.⁶⁷⁸⁹¹⁰^ORCID,Mazzola F.⁶⁷⁸⁹¹⁰

Affiliation:

1. London Centre for Nanotechnology

2. Department of Electronic and Electrical Engineering

3. University College London

4. London WC1H 0AH

5. UK

6. Center for Quantum Spintronics

7. Department of Physics

8. Norwegian University of Science and Technology

9. NO-7491 Trondheim

10. Norway

11. Department of Physics and Astronomy

12. Interdisciplinary Nanoscience Center

13. Aarhus University

14. 8000 Aarhus C

15. Denmark

16. Cubic Carbon Ceramics

17. Huntingtown

18. USA

19. Institute of Applied Physics

20. Russian Academy of Sciences

21. Nizhny Novgorod

22. Russia

Abstract

Using angle-resolved photoelectron spectroscopy, we compare the electronic band structure of an ultrathin (1.8 nm) δ-layer of boron-doped diamond with a bulk-like boron doped diamond film (3 μm).

Funder

Russian Academy of Sciences

Norges Forskningsråd

Det Frie Forskningsråd

Engineering and Physical Sciences Research Council

Villum Fonden

Horizon 2020 Framework Programme

Aarhus Universitets Forskningsfond

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering