Broadband phototransistors realised by incorporating a bi-layer perovskite/NIR light absorbing polymer channel-Reference-Cited by-同舟云学术

Broadband phototransistors realised by incorporating a bi-layer perovskite/NIR light absorbing polymer channel

Published:2019 Issue:16 Volume:7 Page:4808-4816
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Li Ning¹²³⁴⁵^ORCID,Lei Yanlian¹²³⁴⁵^ORCID,Chan Wing Kin Edward¹²³⁴⁵,Zhu Furong¹²³⁴⁵^ORCID

Affiliation:

1. Department of Physics

2. Research Centre of Excellence for Organic Electronics, and Institute of Advanced Materials

3. Hong Kong Baptist University

4. Kowloon

5. China

Abstract

Broadband phototransistors (PTs) with a bi-layer MAPbI₃/NIR light absorbing polymer channel have the advantages of the complementary absorption and high charge transport efficiency of the two materials. The broadband PTs possess simultaneously a specific detectivity (D*) of >10⁹ Jones over the wavelength range from UV to visible light and a high D* of >10⁷ Jones over the NIR light wavelength range.

Funder

Research Grants Council, University Grants Committee

Hong Kong Baptist University

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C8TC06229C

Reference32 articles.

1. NIR to Visible Light Upconversion Devices Comprising an NIR Charge Generation Layer and a Perovskite Emitter

2. Broadband Phototransistor Based on CH3NH3PbI3 Perovskite and PbSe Quantum Dot Heterojunction