InP and Sn:InP based quantum dot sensitized solar cells
Author:
Affiliation:
1. Department of Chemistry
2. Beijing Institute of Technology
3. Beijing 100081
4. China
5. Science and Technology on Surface Physics and Chemistry Laboratory
6. Mianyang 621907
Abstract
InP and Sn doped InP (Sn:InP) based quantum dot sensitized solar cells with a moderate efficiency were successfully fabricated.
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2015/TA/C5TA04925C
Reference56 articles.
1. Solar conversion efficiency of photovoltaic and photoelectrolysis cells with carrier multiplication absorbers
2. Capping Ligand-Induced Self-Assembly for Quantum Dot Sensitized Solar Cells
3. Recombination in Quantum Dot Sensitized Solar Cells
4. Quantum dot-sensitized solar cells incorporating nanomaterials
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