Molecular chemisorption on passivated and defective boron doped silicon surfaces: a “forced” dative bond
Author:
Affiliation:
1. Institut de Science des Matériaux de Mulhouse (IS2M)
2. CNRS UMR 7361
3. Université de Haute Alsace
4. 68093 Mulhouse cedex, France
5. Institut FEMTO-ST
6. Université de Franche-Comté
7. CNRS
8. ENSMM
9. 25044 Besançon cedex, France
Abstract
We investigate the adsorption mechanism of a single trans 4-pyridylazobenzene molecule on a doped boron surface with or without boron-defects, by means of density functional theory calculations.
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://pubs.rsc.org/en/content/articlepdf/2014/CP/C4CP03347G
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1. CONTROLLED MOLECULAR ADSORPTION ON SILICON: Laying a Foundation for Molecular Devices
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5. DNA-modified nanocrystalline diamond thin-films as stable, biologically active substrates
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