Anti-site defect effect on the electronic structure of a Bi2Te3 topological insulator-Reference-Cited by-同舟云学术

Anti-site defect effect on the electronic structure of a Bi2Te3 topological insulator

Published:2018 Issue:1 Volume:8 Page:423-428
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Chuang Pei-Yu¹²³⁴,Su Shu-Hsuan¹²³⁴,Chong Cheong-Wei¹²³⁴,Chen Yi-Fan¹²³⁴,Chou Yu-Heng¹²³⁴,Huang Jung-Chun-Andrew¹²³⁴⁵^ORCID,Chen Wei-Chuan⁶⁷⁴,Cheng Cheng-Maw⁶⁷⁴,Tsuei Ku-Ding⁶⁷⁴,Wang Chia-Hsin⁶⁷⁴,Yang Yaw-Wen⁶⁷⁴,Liao Yen-Fa⁶⁷⁴,Weng Shih-Chang⁶⁷⁴,Lee Jyh-Fu⁶⁷⁴,Lan Yi-Kang⁸⁹¹⁰⁴,Chang Shen-Lin¹¹¹²⁷⁴,Lee Chi-Hsuan¹³¹⁴¹⁵⁴,Yang Chih-Kai¹³¹⁴¹⁵⁴,Su Hai-Lin¹⁶¹⁷¹⁸¹⁹²⁰,Wu Yu-Cheng¹⁶¹⁷¹⁸¹⁹²⁰^ORCID

Affiliation:

1. Department of Physics

2. National Cheng Kung University

3. Tainan 701

4. Taiwan

5. Advanced Optoelectronic Technology Center

6. National Synchrotron Radiation Research Center

7. Hsinchu 300

8. Materials and Electro-Optic Research Division

9. National Chung-Shan Institute of Science and Technology

10. Taoyuan 325

11. Department of Electrophysics

12. National Chiao Tung University

13. Graduate Institute of Applied Physics

14. National Chengchi University

15. Taipei 116

16. School of Materials Science and Engineering

17. Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices

18. Hefei University of Technology

19. Hefei 230009

20. People's Republic of China

Abstract

Tuning the Fermi level (E_F) in Bi₂Te₃ topological-insulator (TI) films is demonstrated on controlling the temperature of growth with molecular-beam epitaxy (MBE).

Funder

Ministry of Education

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/RA/C7RA08995C

Reference31 articles.

1. The birth of topological insulators

2. Topological insulators and superconductors

3. Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells