Flexible resistive switching bistable memory devices using ZnO nanoparticles embedded in polyvinyl alcohol (PVA) matrix and poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS)-Reference-Cited by-同舟云学术

Flexible resistive switching bistable memory devices using ZnO nanoparticles embedded in polyvinyl alcohol (PVA) matrix and poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS)

Published:2018 Issue:36 Volume:8 Page:20423-20433
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Hmar Jehova Jire L.¹²³^ORCID

Affiliation:

1. Department of Physics and Astronomical Sciences

2. Central University of Jammu

3. India

Abstract

The results clearly show that there was no detectable change in resistive switching characteristics of non-volatile bistable memory device even after bending the device at different angles, making it compatible with flexible electronics.

Funder

University Grants Commission

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/RA/C8RA04582H

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3. Nonvolatile memory cell effect in multilayered Ni1−xFex self-assembled nanoparticle arrays in polyimide