Tuning the Fermi level with topological phase transition by internal strain in a topological insulator Bi2Se3thin film-Reference-Cited by-同舟云学术

Tuning the Fermi level with topological phase transition by internal strain in a topological insulator Bi2Se3thin film

Published:2016 Issue:2 Volume:8 Page:741-751
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Kim Tae-Hyeon,Jeong KwangSik,Park Byung Cheol,Choi Hyejin,Park Sang Han,Jung Seonghoon,Park Jaehun,Jeong Kwang-Ho,Kim Jeong Won,Kim Jae Hoon,Cho Mann-Ho

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2016/NR/C5NR06086A

Reference53 articles.

1. Observation of a large-gap topological-insulator class with a single Dirac cone on the surface

2. Topological surface states protected from backscattering by chiral spin texture

3. Bulk Band Gap and Surface State Conduction Observed in Voltage-Tuned Crystals of the Topological InsulatorBi2Se3

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Pulse irradiation synthesis of metal chalcogenides on flexible substrates for enhanced photothermoelectric performance;Nature Communications;2024-01-25

2. High performance broadband photodetector in two-dimensional metal dichalcogenides mediated by topologically protected surface state;Applied Surface Science;2024-01

4. Enhanced Photocharacteristics by Fermi Level Modulating in Sb₂Te₃/Bi₂Se₃ Topological Insulator p–n Junction;Advanced Science;2023-12-31

5. Dynamics of the Bulk-to-Topological State Scattering of Photoexcited Carriers in Bi₂Se₃ Thin Films;ACS Applied Electronic Materials;2023-07-20