High-pressure structural phase transition and metallization in Ga2S3 under non-hydrostatic and hydrostatic conditions up to 36.4 GPa-Reference-Cited by-同舟云学术

High-pressure structural phase transition and metallization in Ga2S3 under non-hydrostatic and hydrostatic conditions up to 36.4 GPa

Published:2021 Issue:8 Volume:9 Page:2912-2918
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Yang Linfei¹²³,Jiang Jianjun⁴⁵³,Dai Lidong⁴⁵³^ORCID,Hu Haiying⁴⁵³^ORCID,Hong Meiling¹²³⁶⁷,Zhang Xinyu¹²³⁶⁷,Li Heping¹²³,Liu Pengfei⁸⁹³

Affiliation:

1. Key Laboratory of High-Temperature and High-Pressure Study of the Earth's Interior, Institute of Geochemistry, Chinese Academy of Sciences

2. Guiyang

3. China

4. Shandong Provincial Key Laboratory of Water and Soil Conservation and Environmental Protection, College of Resources and Environment Sciences, Linyi University

5. Linyi 276000

6. University of Chinese Academy of Sciences

7. Beijing 100049

8. State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences

9. Fuzhou

Abstract

The vibrational, electrical and structural properties of Ga₂S₃ were explored by Raman spectroscopy, EC measurements, HRTEM and First-principles theoretical calculations under different pressure environments up to 36.4 GPa.

Funder

National Natural Science Foundation of China

Chinese Academy of Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D0TC06004F

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1. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

2. Structural and electronic properties of Bi2Se3 topological insulator thin films grown by pulsed laser deposition