Dy<sup>3+</sup> and Tb<sup>3+</sup> codoped mixed garnet crystals with a high-disorder structure for promising efficient InGaN laser-diode pumped yellow lasers-Reference-Cited by-同舟云学术

Dy³⁺ and Tb³⁺ codoped mixed garnet crystals with a high-disorder structure for promising efficient InGaN laser-diode pumped yellow lasers

Published:2023 Issue:42 Volume:25 Page:5975-5984
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Ding Shoujun¹²³^ORCID,Zhang Chuancheng¹,Ren Hao¹,Wang Miaomiao¹,Huang Xianshan¹,Zou Yong¹,Tang Xubing¹,Liu Wenpeng²,Zhang Qingli²^ORCID

Affiliation:

1. School of Microelectronics and Data Science, Anhui University of Technology, Maanshan, Anhui, 243002, PR China

2. Advanced Laser Technology Laboratory of Anhui Province, Hefei, Anhui, 230037, PR China

3. Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei, Anhui, 230031, PR China

Abstract

Dy3+ and Tb3+ codoped mixed garnet crystals with a high-disorder structure were grown by the Cz method. These mixed crystals exhibit distinct advantages for the development of blue laser diode pumped one-step solid-state yellow lasers.

Funder

National Natural Science Foundation of China

Major Science and Technology Projects in Anhui Province

University Natural Science Research Project of Anhui Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CE/D3CE00780D

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