Room-temperature electrochemical reduction of epitaxial Bi2O3 films to epitaxial Bi films-Reference-Cited by-同舟云学术

Room-temperature electrochemical reduction of epitaxial Bi2O3 films to epitaxial Bi films

Published:2016 Issue:99 Volume:6 Page:96832-96836
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

He Zhen¹²³⁴⁵,Koza Jakub A.⁵⁶⁷⁸,Liu Ying-Chau⁵⁶⁷⁸,Chen Qingzhi⁵⁶⁷⁸,Switzer Jay A.⁵⁶⁷⁸

Affiliation:

1. College of Chemistry and Chemical Engineering

2. Central South University

3. Changsha

4. P. R. China

5. Department of Chemistry and Graduate Center for Materials Research

6. Missouri University of Science and Technology

7. Rolla

8. USA

Abstract

A new facile approach to fabricate high-quality epitaxial Bi thin films at room-temperature with enhanced magnetotransport properties has been reported.

Funder

U.S. Department of Energy

Ministry of Education of the People's Republic of China

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C6RA18098A

Reference37 articles.

1. Temperature Dependence of the Low-Field Galvanomagnetic Coefficients of Bismuth

2. Low-temperature electrical-transport properties of single-crystal bismuth films under pressure

3. Large Magnetoresistance and Finite-Size Effects in Electrodeposited Single-Crystal Bi Thin Films

4. Magnetotransport Properties of Electrodeposited Bismuth Films

5. Large Magnetoresistance of Electrodeposited Single-Crystal Bismuth Thin Films

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