Enhanced pH sensitivity over the Nernst limit of electrolyte gated a-IGZO thin film transistor using branched polyethylenimine
Author:
Affiliation:
1. Materials Science Programme
2. Indian Institute of Technology Kanpur
3. Kanpur-208016
4. India
5. Samtel Centre for Display Technologies
6. Department of Chemical Engineering
Abstract
a-IGZO based EGTFT with 4.6-fold enhanced pH sensitivity of ∼110 mV pH−1 using thin film coating of branched polyethylenimine (BPEI).
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2016/RA/C5RA26409J
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4. Polymer Electrolyte Gate Dielectric Reveals Finite Windows of High Conductivity in Organic Thin Film Transistors at High Charge Carrier Densities
5. Ion Gel Gated Polymer Thin-Film Transistors
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