Induced growth of quasi-free-standing graphene on SiC substrates-Reference-Cited by-同舟云学术

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Induced growth of quasi-free-standing graphene on SiC substrates

Published:2019 Issue:55 Volume:9 Page:32226-32231
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Liu Zhenxing¹²³⁴^ORCID,Su Zhen¹²³⁴,Li Qingbo¹²³⁴^ORCID,Sun Li¹²³⁴,Zhang Xue¹²³⁴,Yang Zhiyuan¹²³⁴,Liu Xizheng⁵⁶⁷⁸⁹^ORCID,Li Yingxian¹²³⁴¹⁰,Li Yanlu¹²³⁴^ORCID,Yu Fapeng¹²³⁴^ORCID,Zhao Xian¹²³⁴

Affiliation:

1. Institute of Crystal Materials

2. Center for Optics Research and Engineering of Shandong University

3. Jinan 250100

4. P. R. China

5. Tianjin Key Laboratory of Advanced Functional Porous Materials

6. Institute for New Energy Materials and Low-carbon Technologies

7. School of Materials Science and Engineering

8. Tianjin University of Technology

9. Tianjin 300384

10. Shandong Key Laboratory of Biophysics

Abstract

Quasi-free-standing graphene on a SiC substrate was directly prepared by using the induced graphene growth method.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/RA/C9RA05758G

Reference36 articles.

1. Graphene: Status and Prospects

2. A roadmap for graphene

3. The electronic properties of graphene

4. Room-Temperature Quantum Hall Effect in Graphene

5. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide

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