Giant shape memory and domain memory effects in antiferroelectric single crystals-Reference-Cited by-同舟云学术

Giant shape memory and domain memory effects in antiferroelectric single crystals

Published:2019 Issue:8 Volume:6 Page:1699-1706
ISSN:2051-6347
Container-title:Materials Horizons
language:en
Short-container-title:Mater. Horiz.

Author:

Zhuo Fangping¹²³⁴⁵^ORCID,Damjanovic Dragan⁵⁶⁷^ORCID,Li Qiang¹²³⁴^ORCID,Zhou Yaming¹²³⁴,Ji Yongjie¹²³⁴,Yan Qingfeng¹²³⁴^ORCID,Zhang Yiling⁸²³⁴,Zhou Yun¹²³⁴,Chu Xiangcheng⁸²³⁴

Affiliation:

1. Department of Chemistry

2. Tsinghua University

3. Beijing 100084

4. China

5. Group for Ferroelectrics and Functional Materials, Institute of Materials, Swiss Federal Institute of Technology in Lausanne—EPFL

6. CH-1015 Lausanne

7. Switzerland

8. State Key Laboratory of New Ceramics and Fine Processing

Abstract

Giant shape memory and domain memory effects may promote the development of new antiferroelectric or ferroelectric devices.

Funder

National Natural Science Foundation of China

National Basic Research Program of China

Tsinghua University

State Key Laboratory of New Ceramics and Fine Processing

Publisher

Royal Society of Chemistry (RSC)

Subject

Electrical and Electronic Engineering,Process Chemistry and Technology,Mechanics of Materials,General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2019/MH/C9MH00352E

Reference56 articles.

1. Theory of Antiferroelectric Crystals

2. Field-Forced Antiferroelectric-to-Ferroelectric Switching in Modified Lead Zirconate Titanate Stannate Ceramics

3. High-Strain Lead-free Antiferroelectric Electrostrictors

4. A comprehensive review on the progress of lead zirconate-based antiferroelectric materials

5. Direct observation of the recovery of an antiferroelectric phase during polarization reversal of an induced ferroelectric phase

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Maintainable displacement regulation of ferroelectric shape memory actuators by controlling stable non-180° domain switching;Sensors and Actuators A: Physical;2024-10

2. Antiferroelectric oxide thin-films: Fundamentals, properties, and applications;Progress in Materials Science;2024-04

3. MnO2 doping stabilized antiferroelectric P phase and underlying physical mechanism in NaNbO3-SrTiO3 lead-free ceramics;Journal of the European Ceramic Society;2024-02

4. Ultra-large electromechanical deformation in lead-free piezoceramics at reduced thickness;Materials Horizons;2024

5. In-Plane Ferrielectric Order in van der Waals β′-In₂Se₃;ACS Nano;2023-12-18