Promising transport properties of multifunctional monolayer GeSe nanodevices-Reference-Cited by-同舟云学术

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Promising transport properties of multifunctional monolayer GeSe nanodevices

Published:2024 Issue:20 Volume:12 Page:7252-7259
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Liu Xianghe¹,Mao Yuliang¹^ORCID

Affiliation:

1. Hunan Key Laboratory for Micro–Nano Energy Materials and Devices, School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China

Abstract

In this study, we conducted a thorough investigation of the transport characteristics of thermoelectric devices, p–n junction diodes, and p–i–n homojunction phototransistors based on monolayer (ML) GeSe.

Funder

Natural Science Foundation of Hunan Province

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D4TC00845F

Reference55 articles.

1. Two-dimensional perovskite oxide as a photoactive high-κ gate dielectric

2. Air-stable, all-dry transferred ReS2/GaSe heterostructure-based NO2 gas sensor

3. Single crystal synthesis and properties of the two-dimensional van der Waals frustrated magnets, Mn₂In₂Se₅ and Mn₂Ga₂S₅

4. Progress in photodetector devices utilizing transition metal dichalcogenides

5. Chemical vapor deposition of layered two-dimensional MoSi 2 N 4 materials

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