Thickness-dependent resistive switching in black phosphorus CBRAM
Author:
Affiliation:
1. Dept of Electrical Engineering
2. Sejong University
3. Gwangjin-gu
4. Korea
5. Dept of Physics and Astronomy
6. Graphene Research Institute
Abstract
The main challenge encountered by most 2D materials for their use in non-volatile memory technology is their low Ron/off ratio.
Funder
Ministry of Trade, Industry and Energy
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2019/TC/C8TC04538K
Reference36 articles.
1. Memristive devices for computing
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4. Investigation of thermal stability and reliability of HfO2 based resistive random access memory devices with cross-bar structure
5. Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance
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