Electrostatic gating dependent multiple band alignments in ferroelectric VS2/Ga2O3van der Waals heterostructures-Reference-Cited by-同舟云学术

Electrostatic gating dependent multiple band alignments in ferroelectric VS₂/Ga₂O₃van der Waals heterostructures

Published:2023 Issue:34 Volume:25 Page:22711-22718
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Zhu Yunlai¹^ORCID,Qu Zihan¹,Wang Xiaoteng¹,Zhang Jishun¹,Wu Zuheng¹^ORCID,Xu Zuyu¹,Yang Fei¹^ORCID,Wang Jun¹,Dai Yuehua¹

Affiliation:

1. School of Integrated Circuits, Anhui University, Hefei, Anhui, 230601, China

Abstract

In a 2D VS2/Ga2O3vdW ferroelectric heterostructure, a band structure reversion between the half-metal and semiconductor and electrostatic gating dependent multiple band alignments was realized, showing great potential in ferroelectric memories.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Anhui Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CP/D3CP02428H

Reference48 articles.

1. Piezoelectric Field Effect Transistor and Nanoforce Sensor Based on a Single ZnO Nanowire

2. Applications of Modern Ferroelectrics

3. Ferroelectric memories today

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5. Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials

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